| PART |
Description |
Maker |
| PALCE20V8-10DMB PALCE20V8-10JC PALCE20V8-10JI PALC |
BBG ECL TRNSLATR DIFF; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 15 ns, QCC28
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 10 ns, PDIP24
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 15 ns, CDIP24
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 25 ns, CDIP24
S-Video Cable Assembly; Connector Type A:Mini-DIN 4 Male; Connector Type B:Mini-DIN 4 Male; Cable Length:50ft; Color:Black; No. of Contacts:4
FlashErasable/ReprogrammableCMOSPALDevice
Flash Erasable/ Reprogrammable CMOS PAL Device
|
Cypress Semiconductor, Corp.
CypressSemiconductor
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| 5962-89839132X 5962-8983913RX PALCE16V8-25PC |
Flash Erasable Reprogrammable CMOS PAL
|
Cypress
|
| CY7C291A-25JC CY7C291A-25PC CY7C291A-35JC CY7C291A |
2K x 8 Reprogrammable PROM 2K X 8 OTPROM, 35 ns, PDIP24
2K x 8 Reprogrammable PROM 2K X 8 OTPROM, 50 ns, PDIP24
2K x 8 Reprogrammable PROM 2K X 8 UVPROM, 50 ns, CDIP24
MICROMINIATURE POLARIZED LATCHING RELAY
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| MB98A809AX |
512K Flash Eelectrically Erasable and Programmable (Flash) memory cards(512K电可擦除可编程闪速存储器 12k闪光Eelectrically可擦除和可编程（闪存）记忆卡（为512k电可擦除可编程闪速存储器卡）
|
Fujitsu, Ltd.
|
| M25PE80 |
Page-Erasable Serial Flash memory
|
ST Microelectronics
|
| 29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
|
| EP610IPC-10 EP610SC10 EP610SC-25 EP610SC-15T EP610 |
ASIC
UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件
4kbit EEPROM; Triple Voltage Monitor with Integrated CPU Supervisor; Temperature Range: 0°C to 70°C; Package: 14-TSSOP UV-Erasable/OTP可编程逻辑器件
|
Rochester Electronics, LLC
|
| PY264 PY264-45PM PY264-45PMB PY264-55PMB PY264-35P |
8K X 8 REPROGRAMMABLE PROM 8K的8可重复编程胎膜早
8K X 8 REPROGRAMMABLE PROM 8K X 8 UVPROM, 45 ns, CDIP24
8K X 8 REPROGRAMMABLE PROM 8K X 8 UVPROM, 55 ns, CDIP24
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| MB98A809B |
Flash Erasable and Programmable Memory Card(4M电可擦可编程闪存) 闪光可擦除和可编程记忆卡（分电可擦可编程闪存
|
Fujitsu, Ltd.
|
| PLDC18G8-15DMB PLDC18G8-20DMB PLDC18G8-15QMB PLDC1 |
UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件
Inductorless 5V to -5V Converter; Package: PDIP; No of Pins: 8; Temperature Range: -40°C to 85°C UV-Erasable/OTP可编程逻辑器件
|
Samsung Semiconductor Co., Ltd.
Foxconn Technology Co., Ltd.
Cypress Semiconductor, Corp.
Mitsubishi Electric, Corp.
|
| P89LPC971FDH P89LPC972 |
8-bit microcontroller with accelerated two-clock 80C51 core 2 kB/4 kB/8 kB wide-voltage byte-erasable flash
|
NXP Semiconductors
|
| M45PE10 M45PE10-VMN6G M45PE10-VMN6P M45PE10-VMN6TG |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface
|
Numonyx B.V
|
